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The BC857CQBZ is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in a DFN1110D-3 (SOT8015) surface-mount package. Key electrical parameters include a maximum collector-emitter voltage of 45 V, a maximum collector-base voltage of 45 V, and a collector-emitter saturation voltage of 650 mV. The device is classified as a single transistor configuration.
Verify component status carefully before integration. Official documentation indicates this specific part number has reached the end-of-life stage. Manufacturers typically discontinue production for obsolete items, which may result in limited availability or supply chain constraints. Confirm current stock levels with authorized distributors and assess long-term sourcing risks prior to finalizing procurement plans.
Select this component only if the DFN1110D-3 footprint is mandatory for the design. Ensure the 45 V voltage rating meets circuit requirements. Consider alternative packages like SOT-323 if space permits, as other variants remain active. Verify that the single-transistor configuration aligns with schematic needs rather than dual configurations.
This device belongs to the BC857 series of general-purpose PNP transistors produced by Nexperia. The series offers various gain selections and packaging options to suit different density and performance requirements. The C suffix denotes a specific DC current gain binning category within the product family.
BC857AW,115
The component is listed as End-of-Life, meaning it will be discontinued and is no longer actively manufactured.
It uses the DFN1110D-3 package, also known as SOT8015.