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The BC857CT-7-F is a PNP small signal transistor manufactured by Diodes Incorporated, housed in an SOT-523 surface-mount package. It features an epitaxial planar die construction and supports a collector current of -100 mA with a collector-emitter breakdown voltage (BVCEO) of -45 V. The device operates within a temperature range of -55°C to +150°C and dissipates up to 150 mW. It meets AEC-Q101 standards for high reliability and offers a minimum DC current gain (hFE) of 420 at -2 mA.
Verify the specific ordering suffix matches the required binning grade. Confirm that the reel size and tape width align with automated pick-and-place equipment specifications. Ensure compliance with local environmental directives regarding halogen and antimony content requirements before finalizing procurement orders.
Select this component when a compact PNP transistor with high current gain is required for space-constrained designs. The SOT-523 package provides a smaller footprint compared to standard SOT-23 packages. Consider the thermal resistance characteristics and power dissipation limits when designing heat management strategies for dense PCB layouts.
This part belongs to the BC857 series of PNP transistors produced by Diodes Incorporated. It serves as the 'C' bin variant, offering higher DC current gain compared to the 'A' and 'B' bins. The complementary NPN counterpart is the BC847CT-7-F. The series is designed for general-purpose switching and amplification tasks in consumer and industrial electronics.
BC857AT-7-F, BC857BT-7-F
The maximum collector-base voltage (VCBO) is -50 V.
Yes, the device is qualified to AEC-Q101 standards for high reliability.
The electrostatic discharge human body model (HBM) rating is 4,000 V, corresponding to JEDEC Class 3A.