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The BC857CW-G is a single PNP bipolar junction transistor manufactured by Comchip Technology. It utilizes silicon technology and is housed in an SOT-323-3 surface-mount package. The device features a collector-base voltage of 50 V and an emitter-base voltage of 5 V. It supports a continuous collector current of 100 mA with a power dissipation rating of 200 mW. The component operates within a temperature range of -65 °C to +150 °C and offers a maximum DC current gain of 800.
Verify the manufacturer part number against official Comchip Technology documentation to ensure authenticity. Confirm that the SOT-323-3 package dimensions match your PCB footprint requirements. Check RoHS compliance status through the specific datasheet provided by the supplier, as regulatory details may vary by production batch.
Select this component when a compact PNP transistor is required for low-power signal switching or amplification. The SOT-323-3 package is suitable for space-constrained designs. Ensure the application current remains below the 100 mA limit and that thermal management accommodates the 200 mW power dissipation capability within the specified operating temperature range.
This component belongs to the BC857 series of small-signal transistors produced by Comchip Technology. It serves as a discrete semiconductor solution for basic electronic circuit functions. The product line focuses on standard bipolar junction transistors designed for mass-market electronic manufacturing and general-purpose logic interfacing tasks.
Consult official substitution guides for equivalent PNP transistors in the SOT-323-3 package. Verify electrical parameters such as voltage ratings and current gains before replacing the original component to maintain circuit integrity.