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The BC857CWH6433XTMA1 is a PNP general-purpose bipolar junction transistor manufactured by Infineon Technologies. It features a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 45 V. The device operates with a collector-base voltage of 50 V and an emitter-base voltage of 5 V. It has a maximum power dissipation of 330 mW and a transition frequency of 250 MHz. The component is housed in a surface-mount SOT-23 (P-SOT23-3-3) package, measuring 2 x 1.25 x 0.8 mm. It supports a maximum operating temperature of +150 °C and includes a DC current gain range of 420 to 800.
Verify the specific suffix WH6433XTMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications and binning details. Ensure compatibility with RoHS directives and check for any recent lifecycle status updates or discontinuation notices directly from the manufacturer before finalizing procurement plans.
Select this component when a high-gain PNP transistor is required in a compact SOT-23 footprint. The 420-800 hFE range offers flexibility for various biasing requirements. Consider the 330 mW power dissipation limit and +150 °C thermal rating for appropriate heat management in dense PCB layouts.
This part belongs to Infineon's BC857 series of general-purpose PNP transistors. The series is widely used in consumer electronics and industrial control systems due to its balance of performance and small form factor. The BC857C variant specifically denotes the higher gain binning within the standard family lineup.
Consult official cross-reference lists for verified substitutes such as other BC857C variants from different manufacturers. Ensure replacement parts match the SOT-23 package dimensions and electrical ratings, particularly the 45 V VCEO and 100 mA IC limits.