BC857CWH6433XTMA1

BC857CWH6433XTMA1

$0.02
  • Description:TRANS PNP 45V 0.1A PG-SOT323
  • Series:-

SKU:8703a2a740fd Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 45V 0.1A PG-SOT323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:250 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323
  • Grade:-
  • Qualification:-

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BC857CWH6433XTMA1

Overview

The BC857CWH6433XTMA1 is a PNP general-purpose bipolar junction transistor manufactured by Infineon Technologies. It features a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 45 V. The device operates with a collector-base voltage of 50 V and an emitter-base voltage of 5 V. It has a maximum power dissipation of 330 mW and a transition frequency of 250 MHz. The component is housed in a surface-mount SOT-23 (P-SOT23-3-3) package, measuring 2 x 1.25 x 0.8 mm. It supports a maximum operating temperature of +150 °C and includes a DC current gain range of 420 to 800.

Feature Summary

  • High DC current gain ranging from 420 to 800 for effective signal amplification
  • Low collector-base leakage current of 15 nA for improved stability
  • Compact SOT-23 surface-mount package suitable for space-constrained designs

Applications

  • General-purpose switching applications
  • Signal amplification circuits
  • Consumer electronics logic interfaces

Procurement Notes

Verify the specific suffix WH6433XTMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications and binning details. Ensure compatibility with RoHS directives and check for any recent lifecycle status updates or discontinuation notices directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a high-gain PNP transistor is required in a compact SOT-23 footprint. The 420-800 hFE range offers flexibility for various biasing requirements. Consider the 330 mW power dissipation limit and +150 °C thermal rating for appropriate heat management in dense PCB layouts.

Part Context

This part belongs to Infineon's BC857 series of general-purpose PNP transistors. The series is widely used in consumer electronics and industrial control systems due to its balance of performance and small form factor. The BC857C variant specifically denotes the higher gain binning within the standard family lineup.

Replacement Considerations

Consult official cross-reference lists for verified substitutes such as other BC857C variants from different manufacturers. Ensure replacement parts match the SOT-23 package dimensions and electrical ratings, particularly the 45 V VCEO and 100 mA IC limits.

BC857CWH6433XTMA1BC857CWH6433XTMA1
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