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The BC857CWHE3-TP is a PNP general-purpose transistor manufactured by Micro Commercial Components (MCC). It operates within an ambient temperature range of -65°C to +150°C and features a maximum power dissipation of 150 mW. The device supports a collector current of -100 mA, with a collector-emitter breakdown voltage of -45 V and a collector-base breakdown voltage of -80 V. It exhibits a transition frequency of 100 MHz and a DC current gain ranging from 420 to 800 at specified test conditions.
Verify the component against official MCC datasheets to confirm AEC-Q101 qualification status and RoHS compliance before integration. Ensure storage conditions adhere to moisture sensitivity level 1 guidelines to prevent package damage during soldering processes.
Select this component when a PNP transistor with a minimum DC current gain of 420 is required. The -45 V collector-emitter voltage rating suits low-voltage logic interfacing. Verify that the SOT-323 package dimensions align with the target PCB footprint constraints.
This part belongs to the BC856AWHE3 through BC858CWHE3 series, which are complementary small-signal transistors designed for surface-mount applications. The suffix 'C' denotes a specific DC current gain binning category, distinguishing it from lower gain variants within the same family.
BC857BWHE3-TP
The marking code for the BC857CWHE3-TP is 3G.
The maximum thermal resistance from junction to ambient is 833°C/W.
Yes, the device has a lead-free finish and is RoHS compliant.