BC857CWT1

Overview

The onsemi BC857CWT1 is a PNP silicon general-purpose transistor housed in the SC-70/SOT-323 surface-mount package. It features a collector-emitter voltage of -45 V, a continuous collector current of -100 mA, and a total device dissipation of 150 mW. The DC current gain (hFE) ranges from 180 to 290 at an IC of -2.0 mA and VCE of -5.0 V. The transition frequency is 100 MHz, with a junction-to-ambient thermal resistance of 883 °C/W.

Feature Summary

• Epitaxial planar design for low power applications
• Lead-free packaging compliant with RoHS directives
• High reliability qualification

Applications

• General purpose amplifier circuits
• Low power surface mount designs

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm that the component matches the required electrical characteristics for the intended application before procurement.

Selection Notes

Select this component for applications requiring a compact PNP transistor with moderate gain and voltage ratings. Ensure the design accommodates the specified thermal resistance and maximum power dissipation limits under operating conditions.

Part Context

This part belongs to the BC856/BC857/BC858 series of preferred devices designed by onsemi. These transistors are optimized for general-purpose use in space-constrained electronic designs utilizing surface-mount technology.

Replacement Considerations

Direct replacements include BC857BWT1G and BC857CWT1G. Verify pinout compatibility and electrical specifications when substituting.