BC857CWT1G

$0.12

Description：TRANS PNP 45V 0.1A SC70-3
Series：-

SKU:2cd2b3e55541 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 45V 0.1A SC70-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
Power - Max：150 mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SC-70-3 (SOT323)
Grade：-
Qualification：-

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BC857CWT1G

Overview

The onsemi BC857CWT1G is a PNP silicon epitaxial planar transistor designed for general-purpose amplifier and switching applications. It features a maximum collector current of 100 mA and a collector-emitter voltage rating of -45 V. The device utilizes an SC-70 (SOT-323) surface-mount package, optimized for low-power designs. The 'C' suffix indicates a DC current gain (hFE) range of 420 to 800 at a collector current of -2 mA. It operates within a junction temperature range of -65°C to +150°C and complies with RoHS standards.

Feature Summary

Epitaxial planar silicon construction for reliable small-signal performance
High DC current gain classification suitable for sensitive amplification stages
Automotive-grade qualification including AEC-Q101 certification
Lead-free and halogen-free compliant packaging

Applications

General-purpose signal amplification in consumer electronics
Low-power switching circuits for portable devices
Driver stages in automotive infotainment systems
Complementary pairing with NPN transistors in push-pull configurations

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to confirm pinout orientation and tape-and-reel specifications. Ensure the component meets the required AEC-Q101 reliability standards if deployed in automotive environments. Cross-reference the hFE binning requirements with circuit design margins to guarantee adequate gain performance under varying thermal conditions.

Selection Notes

Select this component when high current gain is critical for low-current signal processing tasks. The SC-70 package is ideal for space-constrained PCB layouts requiring minimal footprint. Consider the -45V breakdown voltage limit when designing for higher voltage rails. Verify that the thermal resistance characteristics align with the expected power dissipation limits in the target application environment.

Part Context

This part belongs to the BC85x series of PNP transistors, which are widely used as complementary counterparts to the BC84x NPN series. The series is standardized across multiple manufacturers for interchangeability in general-purpose analog and digital circuits. The specific WT1G suffix denotes the SC-70 package format and standard reel packaging configuration provided by onsemi.

Replacement Considerations

BC857BW-G
BC857CWH6327XTSA1
BC857CB5003XT

FAQ

What is the DC current gain range for the BC857CWT1G?

The 'C' suffix specifies a DC current gain (hFE) range of 420 to 800 when measured at a collector current of -2 mA.

Is the BC857CWT1G qualified for automotive applications?

Yes, the device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications requiring unique site control.