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Product Detailed Parameters
- Description：TRANS 2PNP 45V 0.1A PG-SOT363-PO
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Bulk
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：45V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：250mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-VSSOP, SC-88, SOT-363
- Supplier Device Package：PG-SOT363-PO
- Grade：-
- Qualification：-
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Overview
The BC857SH6827XTSA1 is a dual PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-363-6 package and operates with a maximum DC collector current of 100 mA. The device features a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. Key electrical parameters include a transition frequency (fT) of 250 MHz, power dissipation (Pd) of 250 mW, and a collector-emitter saturation voltage of 250 mV. The component supports an operating temperature range from -65°C to +150°C and holds AEC-Q100 qualification.
Feature Summary
- Dual PNP configuration within a compact SOT-363-6 surface-mount package
- AEC-Q100 qualified for automotive reliability standards
- High gain bandwidth product supporting high-frequency signal processing
Applications
- Automotive electronic circuits requiring qualified discrete components
- General-purpose signal amplification and switching applications
- Low-power analog circuit design
Procurement Notes
Verify the specific suffix against official Infineon documentation to confirm pinout and electrical tolerances. Confirm availability status as manufacturing lifecycles may change. Ensure compliance with RoHS directives and material content declarations prior to integration into final assemblies.
Selection Notes
Select this component when a dual PNP topology is required in a minimal footprint. Compare hFE ranges and saturation voltages against circuit requirements. Verify thermal management capabilities given the 250 mW power dissipation limit in the SOT-363 package.
Part Context
This part belongs to the BC857 series of general-purpose transistors. It shares family characteristics with other variants like the BC857S but differs in specific binning and packaging configurations. The SH6827XTSA1 designation indicates specific tape-and-reel packaging and grading parameters defined by Infineon.
Replacement Considerations
Cross-reference with BC857SH6327XTSA1 for similar dual PNP specifications. Verify pin compatibility and electrical limits before substituting with generic SOT-363 dual PNP devices.
