BC857T,115

Overview

The BC857T,115 is a single PNP bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in a TO-236AB-3 (SOT-23) surface-mount package. Key electrical specifications include a maximum collector current of 100 mA, a collector-emitter voltage of 45 V, and a collector-base voltage of 50 V. The device features an emitter-base voltage rating of 5 V, a power dissipation of 250 mW, and a transition frequency of 100 MHz. It operates within a temperature range of -65°C to +150°C.

Feature Summary

• PNP polarity configuration for general-purpose switching and amplification
• Silicon-based construction for stable performance
• Surface-mount design compatible with automated assembly

Applications

• General-purpose signal amplification
• Switching applications in consumer electronics
• Interface circuits requiring low-power control

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for end-of-life notices, as the product lifecycle status indicates obsolescence. Ensure packaging details match requirements for tape-and-reel handling during procurement.

Selection Notes

Select this component for designs requiring a standard PNP transistor in a compact SOT-23 footprint. Verify that the 100 mA current limit and 45 V voltage ratings align with circuit demands. Consider alternative packages if higher thermal dissipation or different pin configurations are required for the specific application layout.

Part Context

This part belongs to the BC857 series of small-signal NPN and PNP transistors from Nexperia. These devices are widely used in portable electronics and general-purpose circuits due to their low cost and reliable performance. The BC857 variant specifically provides the complementary PNP counterpart to the BC856 NPN transistor.

Replacement Considerations

• BC857AW,115