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The BC857W,135 is a single PNP general-purpose bipolar junction transistor manufactured by Nexperia. It is housed in the SOT-323 (SC-70) surface-mount plastic package. The device features a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. Key electrical parameters include a transition frequency of 100 MHz, a power dissipation rating of 200 mW, and a DC current gain (hFE) minimum of 125 at 2 mA and 5 V. The component operates within a temperature range of -65 °C to +150 °C.
Verify the specific suffix '135' corresponds to the reel packaging format required for your assembly line. Confirm that the SOT-323 footprint matches your PCB design guidelines. Ensure compliance with RoHS directives as indicated in official documentation before finalizing procurement orders.
Select this component when a compact PNP transistor with moderate voltage ratings is required. The 45 V breakdown voltage and 100 mA current capacity define its operational limits. Consider the 100 MHz transition frequency for high-speed switching requirements compared to lower-frequency alternatives.
This part belongs to the BC857 series of general-purpose transistors from Nexperia. It serves as the PNP counterpart to the NPN BC847W. The series is designed for versatile use in portable devices where small form factors are critical. The W suffix denotes the specific binning or gain characteristics defined in the datasheet.
BC847W,135 is the complementary NPN device within the same family. Other variants like BC857AW,115 offer different gain ranges but share the same package and basic electrical ratings.