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The BC858A-HF is a PNP bipolar junction transistor manufactured by Comchip Technology, designed for general-purpose switching and amplification applications. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. Key electrical specifications include a collector-emitter voltage (VCEO) of -30 V, a collector-base voltage (VCBO) of -30 V, and an emitter-base voltage (VEBO) of -5 V. The device supports a continuous collector current of 100 mA with a power dissipation rating of 250 mW. It features a DC current gain (hFE) range of 110 to 200 and operates within a temperature range of -65°C to +150°C.
Verify the specific hFE binning class (A) against design requirements, as gain ranges vary significantly between A, B, and C variants. Confirm RoHS compliance status via the manufacturer's latest documentation. Ensure the SOT-23-3 footprint matches the PCB layout. Check for halogen-free certification if required by project specifications. Validate supply chain authenticity through authorized distributors.
Select this component when a PNP transistor with moderate gain (110-200) is required. Compare against BC858B or BC858C if higher gain is needed. Consider the SOT-23-3 package constraints for space-limited designs. Verify that the 250 mW power dissipation is sufficient for the intended thermal environment. Ensure the -30 V voltage rating meets circuit demands.
This part belongs to the BC858 series of small-signal PNP transistors from Comchip Technology. It shares the same physical package and basic voltage/current ratings as other variants in the family but differs in DC current gain classification. The 'HF' suffix indicates halogen-free manufacturing. It serves as a direct functional replacement for industry-standard BC858A devices in equivalent form factors.
The minimum DC current gain (hFE) is 110 and the maximum is 200.
Yes, the product description explicitly states it is halogen-free.
The maximum power dissipation is 250 mW.