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The BC858A-TP is a PNP silicon small-signal bipolar junction transistor manufactured by Micro Commercial Components. It utilizes an SOT-23 surface-mount package and supports a maximum DC collector current of 100 mA with a collector-emitter breakdown voltage of 30 V. The device features a transition frequency of 100 MHz and a power dissipation rating of 300 mW. The 'A' suffix indicates a specific DC current gain (hFE) binning range, typically providing higher amplification compared to standard variants.
Verify the exact datasheet revision and hFE binning specifications directly from the manufacturer before design finalization. Confirm that the SOT-23 footprint matches the target PCB layout. Ensure thermal management strategies account for the 300 mW power dissipation limit under expected operating conditions.
Select this component when a PNP transistor with moderate gain and low-power handling is required in a small form factor. Compare the specific hFE range against circuit requirements to ensure adequate amplification. Consider the SOT-23 package constraints regarding thermal resistance and soldering profiles during assembly planning.
This part belongs to the BC858 series of PNP transistors produced by MCC. The series offers various gain grades distinguished by alphabetical suffixes. The BC858A variant provides a tighter or higher gain specification suitable for precision analog applications requiring stable amplification characteristics within the small-signal domain.
BC858B-TP: Offers different gain characteristics. BC858C-TP: Provides alternative gain binning. BC858CLT1: Compatible pinout from other manufacturers.