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The BC858A_R1_00001 is a PNP general-purpose bipolar junction transistor manufactured by Panjit International Inc. It operates with a collector-emitter voltage of 30V and a maximum continuous collector current of 100mA. The device features a transition frequency of 200MHz and a power dissipation rating of 330mW. It is housed in a surface-mount SOT-23 package, suitable for automated assembly processes.
Verify the specific suffix R1_00001 against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications. Ensure that the ordering quantity aligns with the required reel size and that the component meets all relevant environmental compliance standards before finalizing procurement.
Select this component when a PNP transistor with a 30V breakdown voltage and 100mA current capacity is required. The SOT-23 package offers space efficiency for compact designs. Consider the 200MHz frequency limit for high-speed requirements and ensure thermal management supports the 330mW dissipation rating within the operating temperature range.
This part belongs to the BC858 series of PNP transistors from Panjit. It serves as a standard discrete semiconductor solution for consumer electronics and industrial control systems. The R1_00001 designation indicates specific manufacturing and packaging parameters defined by the producer for supply chain integration.
BC858C-AU_R1_000A1
The maximum continuous collector current (Ic) is 100mA.
No, the BC858A_R1_00001 is exclusively available in the SOT-23 surface-mount package.