SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC858AHE3-TP is a PNP silicon bipolar junction transistor manufactured by Micro Commercial Components. It utilizes an SOT-23-3 surface-mount package and operates within a temperature range of -55°C to +150°C. Key electrical specifications include a maximum collector current of 100 mA, a collector-emitter voltage of 30 V, and a power dissipation rating of 300 mW. The device features a gain-bandwidth product of 100 MHz and a DC current gain (hFE) ranging from 125 to 250 at -2 mA and -5 V.
Verify the specific suffix HE3-TP against official Micro Commercial Components documentation to confirm RoHS compliance and lead-free status. Ensure the ordering part number matches the exact gain binning requirements for your circuit design. Cross-reference datasheet parameters with actual component markings to prevent counterfeit substitution during procurement.
Select this component when a PNP transistor with moderate current handling and high gain is required in a small footprint. The SOT-23-3 package suits space-constrained designs. Verify that the 30 V voltage rating and 100 mA current limit align with the operational demands of the target application circuit.
This component belongs to the BC858A series of small-signal PNP transistors produced by Micro Commercial Components. The series is designed for general-purpose use in consumer electronics and industrial control systems where reliable switching and amplification are necessary within standard operating temperature ranges.
Compatible substitutes include BC858B variants or equivalent PNP transistors from other manufacturers such as ON Semiconductor or NXP, provided they meet the same voltage, current, and package specifications.