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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：125 @ 2mA, 5V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BC858ALT1G is a PNP silicon general-purpose transistor from the BC856ALT1G series, manufactured by onsemi. It operates with a collector-emitter voltage of -30 V and a continuous collector current of -100 mA dc. The device features a DC current gain (hFE) ranging from 180 to 520 at an IC of -2.0 mA and VCE of -5.0 V. Electrical characteristics include a collector-base breakdown voltage of -30 V and an emitter-base breakdown voltage of -5.0 V. Thermal performance specifies a total device dissipation of 225 mW on an FR-5 board at 25°C ambient temperature.
Feature Summary
- PNP silicon construction designed for general-purpose amplifier applications
- Compliant with RoHS standards and halogen-free manufacturing requirements
- Capable of supporting automotive applications through AEC-Q101 qualification when prefixed with S or NSV
Applications
- General-purpose amplification circuits
- Switching applications requiring low power consumption
- Automotive electronic systems subject to PPAP requirements
Procurement Notes
Verify that the specific part number matches the required voltage rating, as the BC858 variant differs from the BC856 and BC857 within the same series. Confirm whether the 'S' or 'NSV' prefix is necessary for automotive compliance and unique site control change requirements. Ensure the package style corresponds to the intended pinout configuration for the specific application design.
Selection Notes
Select this component based on the -30 V collector-emitter voltage limit and the specific hFE binning requirements for the target circuit. Consider the thermal resistance and power dissipation limits relative to the operating environment. Verify compatibility with the desired packaging format, such as tape and reel quantities, for automated assembly processes.
Part Context
This device belongs to the BC856ALT1G series, which includes complementary NPN devices like the BC846ALT1G. The series provides standardized electrical characteristics for general-purpose use across various semiconductor manufacturers. The BC858 specifically offers lower voltage ratings compared to the BC856 and BC857 variants within the same family.
Replacement Considerations
Compatible substitutes include BC858BLT1G and BC858CLT1G from onsemi, which share the same package and basic electrical structure but differ in DC current gain ranges. Other manufacturers may offer equivalent PNP transistors with similar -30 V ratings and SOT-23 packaging.
