BC858AW-7-F

Overview

The BC858AW-7-F is a PNP small signal transistor manufactured by Diodes Incorporated in an SOT323 surface-mount package. It features a collector-emitter voltage (VCEO) of -30 V and a continuous collector current (IC) of -100 mA, with a peak pulse current of -200 mA. The device has a power dissipation rating of 200 mW at +25°C and operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) group A specification of 125 to 250 at IC = -2.0 mA and VCE = -5.0 V, a transition frequency (fT) of 100 MHz to 200 MHz, and a base-emitter turn-on voltage (VBE(on)) ranging from -600 mV to -750 mV.

Feature Summary

• Totally lead-free and fully RoHS compliant, halogen-free, and antimony-free green device
• Ideally suited for automatic insertion into manufacturing lines
• Complementary NPN types available within the same series
• Qualified to JEDEC standards for high reliability applications

Applications

• Switching circuits
• Audio Frequency (AF) amplifier applications

Procurement Notes

Verify that the component matches the specific BC858AW-7-F designation to ensure correct hFE grouping and voltage ratings. Confirm compliance requirements such as RoHS 3 and REACH status against project specifications. Check datasheet revision DS30251 Rev. 12-2 for any updates to electrical parameters or mechanical dimensions before finalizing procurement documentation.

Selection Notes

Select this component when a PNP transistor with a -30 V collector-emitter breakdown voltage is required. Ensure the application demands a maximum continuous collector current of -100 mA and fits within the 200 mW power dissipation limit. Verify that the required DC current gain falls within the specified Group A range of 125 to 250 for the intended operating conditions.

Part Context

This part belongs to the BC856AW–BC858CW series of PNP small signal transistors designed for general-purpose switching and amplification. The 'AW' suffix indicates the specific voltage rating and hFE binning for the BC858 variant within the SOT323 package family. It serves as a compact alternative to larger through-hole packages while maintaining standard bipolar junction transistor performance metrics.

Replacement Considerations

Direct replacements must match the -30 V VCEO rating and SOT323 footprint. Verify that substitute parts meet the same hFE Group A minimums and thermal resistance characteristics to maintain circuit stability without redesign.

FAQ

What is the DC current gain range for the BC858AW-7-F?

The DC current gain (hFE) for the BC858AW-7-F is specified in Group A, ranging from a minimum of 125 to a maximum of 250 at a collector current of -2.0 mA and VCE of -5.0 V.

Is the BC858AW-7-F suitable for automotive applications?

Standard BC858AW-7-F parts are not qualified for automotive use. For automotive applications requiring specific change control and IATF 16949 certification, customers should refer to the related automotive grade parts with the Q-suffix.

What is the maximum power dissipation of the BC858AW-7-F?

The maximum power dissipation (PD) is 200 mW at an ambient temperature of +25°C, measured on a single-sided FR4 PCB under still air conditions.