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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SOT-323
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：125 @ 2.2mA, 5V
- Power - Max：150 mW
- Frequency - Transition：100MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
- Grade：-
- Qualification：-
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Overview
The BC858AW-G is a single PNP bipolar junction transistor manufactured by Comchip Technology. It utilizes silicon technology and is housed in an SOT-323-3 surface-mount package. The device supports a maximum DC collector current of 100 mA and operates with a collector-emitter voltage (VCEO) of 30 V, a collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 5 V. Key electrical characteristics include a power dissipation rating of 150 mW, a transition frequency (fT) of 100 MHz, and a collector-emitter saturation voltage of 650 mV. The component offers a DC current gain (hFE) range from 125 to 250. It functions within a temperature range of -65°C to +150°C.
Feature Summary
- PNP polarity configuration for single-transistor applications
- Silicon-based construction for stable switching performance
- Compact SOT-323-3 surface-mount footprint
Applications
- General-purpose signal switching circuits
- Low-power amplifier stages
- Logic interface buffering
Procurement Notes
Verify the manufacturer designation as Comchip Technology and confirm the specific suffix AW-G against official datasheets. Ensure the ordering information matches the SOT-323-3 package type and PNP configuration. Cross-reference RoHS compliance status directly with the supplier's documentation prior to procurement.
Selection Notes
Select this component when a compact PNP transistor with moderate voltage ratings is required. The 100 mA current capacity and 30 V breakdown voltages suit low-power discrete applications. Verify that the 150 mW power dissipation limit aligns with the thermal design constraints of the target circuit layout.
Part Context
This part belongs to the BC858 series of small-signal transistors. It serves as a discrete semiconductor solution for analog and digital switching tasks. The device is designed for integration into consumer electronics and industrial control boards where space efficiency and reliable PNP operation are necessary.
Replacement Considerations
Consult official substitution guides for compatible PNP transistors in the SOT-323 package. Verify pinout compatibility and ensure equivalent voltage and current ratings before implementing any alternative components.
