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The BC858B-AU_R1_000A1 is a PNP general-purpose bipolar junction transistor manufactured by Panjit International Inc. It operates within a collector-emitter voltage range of up to 30V and supports a maximum continuous collector current of -100mA. The device features a power dissipation rating of 330mW and is housed in an SOT-23 surface-mount package. It is qualified under the AEC-Q101 automotive standard, ensuring reliability for demanding environments. The component functions as part of the BC856/BC857/BC858 series, offering complementary pairing with the BC84x NPN series.
Verify the specific beta (hFE) binning classification corresponding to the 'B' suffix during procurement. Confirm that the ordering prefix matches the required tape-and-reel packaging format. Ensure compatibility with existing PCB footprints designated for SOT-23 packages. Cross-reference the latest datasheet revision to confirm material compliance details.
Select this component when a PNP transistor with 30V breakdown and 100mA current capacity is required in a compact SOT-23 form factor. The AEC-Q101 qualification makes it suitable for automotive deployments. Consider complementary NPN variants from the same family for push-pull or differential configurations. Verify thermal management requirements against the 330mW dissipation limit.
This device belongs to the BC85x series of PNP general-purpose transistors produced by Panjit. The series includes variants such as BC856, BC857, and BC859, differentiated primarily by their DC current gain characteristics. These components are designed for low-voltage, low-power switching and amplification tasks across consumer and industrial electronics.
BC858C-AU_R1_000A1
The maximum collector-emitter voltage (Vceo) is rated at 30V.
Yes, the component is qualified according to the AEC-Q101 standard for automotive use.
It is designed to be complementary to the BC848 NPN transistor from the same product family.