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The BC858B RFG is a PNP general-purpose transistor manufactured by Taiwan Semiconductor Corporation. It features a collector-emitter voltage of -30V and a maximum collector current of -100mA. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 200mW of power. It utilizes an SOT-23 surface-mount package with three terminals. The DC current gain (hFE) is specified at a minimum of 220 under test conditions of 2mA base current and 5V collector-emitter voltage.
Verify the specific manufacturer designation, as the model suffix may indicate regional or distributor-specific packaging variations. Confirm RoHS compliance status through official datasheets prior to integration. Ensure the sourcing channel provides authentic components from Taiwan Semiconductor Corporation to guarantee electrical parameter consistency and long-term reliability in final assemblies.
Select this component when a PNP transistor with 30V breakdown voltage and 100mA continuous current capability is required. The SOT-23 package offers space efficiency for dense PCB layouts. Consider the hFE binning specifications if precise gain matching is necessary for the application. Evaluate thermal management requirements based on the 200mW power dissipation limit in the chosen enclosure environment.
This part belongs to the BC858 series of PNP transistors, which are widely used in analog and digital switching circuits. The 'RFG' suffix typically denotes specific tape-and-reel packaging configurations intended for high-volume surface-mount technology production lines. It serves as the complementary counterpart to the BC848B NPN transistor in many standard circuit designs.
The maximum collector-emitter voltage (Vceo) is -30V.
Yes, it is designed to complement the BC848 series of NPN transistors.
The minimum DC current gain is 220, measured at a collector current of 2mA and a collector-emitter voltage of 5V.