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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SOT-23
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：200 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
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Overview
The BC858B is a PNP silicon general-purpose transistor manufactured by Taiwan Semiconductor Corporation. It features a collector-emitter voltage (VCEO) of -30 V and a continuous collector current (IC) of -100 mA. The device operates within a junction temperature range of -55°C to +150°C. It utilizes the SOT-23 surface-mount package, providing a compact form factor for space-constrained designs.
Feature Summary
- PNP polarity configuration for signal amplification
- SOT-23 surface-mount packaging for automated assembly
- Silicon planar epitaxial construction
Applications
- General-purpose signal amplification
- Switching applications in low-power circuits
- Driver stages for small-signal loads
Procurement Notes
Verify the specific manufacturer marking and datasheet revision when sourcing from distributors. Confirm that the component matches the standard BC858B electrical specifications rather than automotive or high-reliability variants unless explicitly stated. Ensure the package type corresponds to SOT-23 requirements for your PCB layout.
Selection Notes
Select this component for standard PNP switching tasks requiring moderate voltage handling. Compare hFE gain bands if precise amplification ratios are critical. Verify thermal dissipation capabilities against your circuit's power constraints to ensure operation remains within safe limits during continuous duty cycles.
Part Context
This part belongs to the widely used BC858 series of small-signal transistors. It serves as the PNP complement to the NPN BC848 series. The BC858B variant specifically denotes a particular DC current gain binning level, distinguishing it from other gain grades within the same family.
Replacement Considerations
- BC858BWT1G (onsemi)
- BC858B-QR (Nexperia)
- BC858B_R2_00001 (Panjit)
FAQ
What is the maximum collector-emitter voltage for the BC858B?
The maximum collector-emitter voltage (VCEO) is -30 V.
Which package style does the BC858B use?
It is housed in an SOT-23 surface-mount package.
Is the BC858B suitable for high-frequency applications?
It is designed for general-purpose amplification and switching, not specifically optimized for high-frequency RF operations.
