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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A PG-SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：330 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
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Overview
The BC858BE6433HTMA1 is a PNP silicon small-signal bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and designed for audio frequency applications. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 30 V, a maximum collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 5 V. The device supports a continuous DC collector current of 100 mA with a power dissipation rating of 330 mW. It features a transition frequency (fT) of 250 MHz and operates within a temperature range of -65°C to +150°C.
Feature Summary
- PNP silicon construction optimized for general-purpose switching and amplification tasks.
- Integrated thermal protection capabilities inherent to the silicon process technology.
- RoHS compliant manufacturing ensuring adherence to environmental standards.
Applications
- Audio frequency signal processing circuits
- General-purpose low-power switching applications
- Amplifier stages in consumer electronics
Procurement Notes
Verify the specific ordering suffix E6433HTMA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Confirm component availability status as distribution data may indicate end-of-life or discontinuation phases. Ensure compatibility with standard SOT-23 footprints during procurement planning.
Selection Notes
Select this component when a PNP configuration is required with a 30 V collector-emitter breakdown voltage. The 100 mA current rating and 330 mW power dissipation define its thermal limits. Verify that the SOT-23-3 package dimensions fit the target PCB layout constraints before finalizing the design choice.
Part Context
This part belongs to the BC858 series of PNP transistors from Infineon Technologies. The series is characterized by high gain bandwidth products suitable for audio frequencies. The specific suffix denotes the manufacturer's internal coding for packaging and material composition, distinguishing it from other variants in the same family.
Replacement Considerations
Consult official Infineon substitution guides for verified equivalents. Generic cross-references should be validated against pinout and electrical parameter tolerances to ensure functional compatibility without circuit modification.
