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The BC858BHZGT116 is an automotive-grade PNP bipolar junction transistor manufactured by ROHM Semiconductor. It operates in a surface-mount SOT-23 (SST3) package with three terminals. Key electrical specifications include a collector-emitter voltage of -45 V, a collector current of -0.1 A, and a power dissipation of 0.2 W. The device features a DC current gain (hFE) range of 210 to 480 at specified test conditions. It complies with the AEC-Q101 qualification standard for automotive applications.
Verify the specific suffix 'HZGT116' against official ROHM documentation to confirm the exact tape-and-reel quantity and marking configuration. Ensure the procurement channel provides traceability to the manufacturer's original packaging. Confirm that the delivered components match the AEC-Q101 automotive grade requirements specified in the datasheet.
Select this component when designing for automotive environments requiring high reliability and small form factors. The PNP polarity and -45 V rating suit low-voltage switching tasks. Compare the hFE range against circuit requirements to ensure adequate gain. Verify thermal management capabilities within the 0.2 W power dissipation limit for the intended operating temperature range.
This part belongs to ROHM's BC858 series of general-purpose PNP transistors. The 'HZG' designation indicates the automotive-grade variant, which undergoes stricter quality control compared to standard commercial grades. It complements the NPN BC848BHZG transistor in complementary pairs for push-pull or differential amplifier configurations.
The BC858BHZG is listed as a compatible alternative with identical pinout and package. Verify that the non-suffixed version meets the same AEC-Q101 automotive qualification if required for the application.