ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
Download product information
Overview
The BC858BLT1G is a PNP silicon general-purpose transistor from the BC856ALT1G series, manufactured by onsemi. It is housed in an SOT-23 (TO-236) surface-mount package with three pins. The device features a collector-emitter voltage of -30 V and a continuous collector current rating of -100 mA dc. Electrical characteristics include a minimum DC current gain (hFE) of 150 at a collector current of -2.0 mA and VCE of -5.0 V. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- PNP epitaxial silicon planar design suitable for general-purpose amplifier applications
- AEC-Q101 qualified and PPAP capable for automotive requirements
- Lead-free, halogen-free, and bromine-free construction compliant with RoHS directives
Applications
- General-purpose amplification circuits
- Automotive electronic systems requiring unique site control
- Switching applications compatible with standard logic levels
Procurement Notes
Verify the specific ordering suffix 'LT1G' corresponds to the SOT-23 tape and reel packaging configuration. Confirm that the 'B' designation aligns with the required DC current gain binning specifications for the target application. Ensure compliance with AEC-Q101 qualification standards if the deployment involves automotive chassis or safety-critical subsystems.
Selection Notes
Select this component when a PNP small-signal transistor with a -30 V collector-emitter breakdown voltage is required. The BC858 variant offers lower voltage tolerance compared to the BC856 (-65 V) and BC857 (-45 V) counterparts. Verify that the -100 mA continuous collector current limit meets the load requirements and that the SOT-23 footprint fits the PCB layout constraints.
Part Context
This part belongs to the BC856ALT1G series, which encompasses BC856, BC857, BC858, and BC859 devices differentiated primarily by their voltage ratings. The series utilizes a standardized SOT-23 case outline (CASE 318). The 'B' suffix indicates a specific hFE gain binning tier, ensuring consistent amplification performance across production batches.
Replacement Considerations
Direct substitutes within the same series include BC856BLT1G and BC857BLT1G, provided the circuit voltage headroom accommodates their respective higher breakdown voltages. Cross-manufacturer equivalents must be verified against the -30 V VCEO and -100 mA IC limits.
