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The BC858BLT3G is a PNP silicon general-purpose transistor from the onsemi BC856ALT1G series, housed in an SOT-23 (TO-236) package. It features a collector-emitter voltage of -30 V and a continuous collector current of -100 mA. The device offers a DC current gain range of 125 to 475 at specific test conditions. Thermal characteristics include a total device dissipation of 225 mW on an FR-5 board and a junction-to-ambient thermal resistance of 556 °C/W. Operating and storage temperatures span from -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping configuration. Confirm whether the 'S' or 'NSV' prefix is required for automotive PPAP capability or unique site control requirements. Ensure the selected variant matches the exact electrical specifications and marking diagram defined in the BC856ALT1G data sheet.
Select this component for low-power general-purpose switching and amplification tasks within the specified voltage and current limits. Consider the BC858B grade for higher current gain requirements compared to other series variants. Evaluate thermal management needs based on the 225 mW dissipation rating on standard FR-5 substrates when designing high-density PCB layouts.
This part belongs to the BC856/BC857/BC858/BC859 family of PNP transistors manufactured by onsemi. These devices are designed as complementary pairs to NPN counterparts like the BC848 series. The BC858 variant specifically provides a -30 V collector-emitter breakdown voltage, distinguishing it from the higher voltage BC856 (-65 V) and BC857 (-45 V) models within the same package lineup.
Direct substitutes include BC858BLT1G and BC858CLT1G from onsemi, which share the SOT-23 package and core electrical characteristics. Cross-manufacturer equivalents such as MMBT3906 or generic BC858 types may be considered if pinout compatibility and electrical ratings align with the original design constraints.