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The BC858BW-G is a single PNP bipolar junction transistor manufactured by Comchip Technology. It utilizes silicon technology and is housed in an SMD/SMT SOT-323-3 package. The device supports a maximum DC collector current of 100 mA and features a collector-emitter breakdown voltage (VCEO) of 30 V, with a collector-base voltage (VCBO) of 30 V and an emitter-base voltage (VEBO) of 5 V. Key electrical characteristics include a collector-emitter saturation voltage of 650 mV, a power dissipation rating of 150 mW, and a gain-bandwidth product (fT) of 100 MHz. The component operates within a temperature range of -65°C to +150°C.
Verify the manufacturer designation as Comchip Technology on the component marking or datasheet. Confirm the specific suffix 'G' indicates RoHS compliance status. Ensure the package type matches the required SOT-323-3 footprint for PCB layout compatibility. Cross-reference the part number against official distributor catalogs to confirm authenticity and avoid counterfeit components.
Select this component when a PNP transistor with a 30 V collector-emitter voltage rating is required. The 100 mA current capacity suits low-power switching tasks. The SOT-323-3 package is appropriate for space-constrained surface-mount designs. Verify that the 150 mW power dissipation limit aligns with the thermal management capabilities of the target application environment.
This component belongs to the BC858 series of small-signal transistors. It serves as a standard discrete semiconductor device for analog and digital logic interfaces. The BC858 family is widely utilized in consumer electronics and industrial control systems where reliable PNP switching is necessary.
Direct substitutes may include other manufacturers' BC858 variants in SOT-323 packages, such as those from Nexperia or Diotec, provided they meet the same electrical specifications.