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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SOT-323
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：200 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
- Grade：-
- Qualification：-
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Overview
The Diotec Semiconductor BC858BW is a general-purpose PNP silicon epitaxial planar transistor housed in an SOT-323 surface-mount package. It features a maximum collector-emitter voltage of -30 V and a continuous collector current rating of -100 mA, with a peak collector current capability of -200 mA. The device dissipates up to 200 mW of power at 25°C ambient temperature. It offers three DC current gain (hFE) groups: Group B ranges from 220 to 475, while Group C spans 420 to 800. The transition frequency is typically 100 MHz, and the operating junction temperature extends up to +150°C.
Feature Summary
- Offers three distinct DC current gain groupings for precise amplifier biasing
- Features low saturation voltages for efficient switching applications
- Compliant with RoHS directives and REACH regulations
Applications
- General-purpose signal processing circuits
- Low-power switching logic interfaces
- Audio frequency amplification stages
Procurement Notes
Verify the specific suffix designation when ordering. The standard 'BW' variant denotes commercial/industrial grade performance. Ensure the '-Q' or '-AQ' suffix is explicitly requested if automotive AEC-Q101 qualification is required for the target application environment.
Selection Notes
Select the appropriate hFE group based on circuit gain requirements. Group B provides moderate gain suitable for standard switching, whereas Group C offers higher gain ideal for sensitive amplification tasks. Confirm that the -30 V collector-emitter breakdown voltage aligns with the system's supply rails.
Part Context
This component belongs to the BC856W through BC859W series of universal PNP transistors. These devices are designed as complementary pairs to the BC846W through BC849W NPN transistors, facilitating push-pull output configurations and balanced differential amplifier designs in compact electronic systems.
Replacement Considerations
BC858BWT1
FAQ
What is the maximum collector-emitter voltage for this model?
The maximum collector-emitter voltage (VCEO) is rated at -30 V.
Which current gain groups are available for the BC858BW?
The BC858BW is available in Group B (220–475) and Group C (420–800).
Is this transistor qualified for automotive applications?
Standard versions are commercial grade. Automotive-grade parts require the specific '-Q' or '-AQ' suffix indicating AEC-Q101 compliance or qualification.
