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The BC858BWT106 is a PNP general-purpose amplification transistor manufactured by ROHM Semiconductor. It operates with a collector current of -100 mA and a collector-emitter voltage of -30 V. The device features a DC current gain (hFE) range of 210 to 480 at a collector current of -1 mA. It is housed in an SST3 (SOT-323) surface-mount package with dimensions of 2.4x2.9 mm and a thickness of 1.2 mm. The component supports a maximum power dissipation of 0.2 W and functions within a storage temperature range of -65°C to +150°C.
Verify the specific manufacturer marking code on the component body, as suffixes like WT106 denote tape-and-reel packaging quantities rather than functional differences. Confirm RoHS compliance status through official datasheets, as standard grades may vary by production batch. Ensure the ordering part number matches the required hFE binning grade for precise gain requirements in your design.
Select this component for designs requiring a PNP counterpart to the BC848B series. The fixed hFE binning ensures predictable gain characteristics without manual sorting. Consider the thermal limitations of the small SOT-323 package when determining heat dissipation needs in high-density PCB layouts.
This device belongs to the BC858BW series of general-purpose transistors from ROHM. It is classified as a standard-grade product intended for consumer electronics and industrial control systems. The manufacturer explicitly states that this product is not recommended for use in automotive equipment due to its standard reliability classification.
Public confirmed substitute part numbers include BC858BWT1 and BC858BWT3.