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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SC70-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：150 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70-3 (SOT323)
- Grade：-
- Qualification：-
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Overview
The BC858BWT1G is a PNP silicon small-signal bipolar junction transistor manufactured by onsemi. It is housed in the SC-70 (SOT-323) surface-mount package, designed for low-power applications. The device features a collector current of 100 mA and a collector-emitter voltage rating of 30 V. It operates within an ambient temperature range of -55°C to +150°C and has a maximum power dissipation of 220 mW at 25°C. The component is lead-free, halogen-free, bromine-free, and RoHS compliant.
Feature Summary
- Designed for general-purpose amplifier applications
- Housed in SC-70/SOT-323 package for low-power surface mount use
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
Applications
- General purpose amplifier circuits
- Low-power surface mount applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and compliance status. Ensure the part number matches the exact marking code required for the assembly process. Confirm that the supplier provides traceability documentation consistent with onsemi quality standards. Check for any automotive-specific prefixes if AEC-Q101 qualification is required for the target application.
Selection Notes
Select this component when a compact PNP transistor is needed for signal amplification or switching in space-constrained designs. The SOT-323 package offers a small footprint suitable for high-density PCB layouts. Consider the 30V breakdown voltage and 100mA current capability to ensure adequate headroom for the intended circuit operation. Verify thermal management requirements given the 220mW power dissipation limit.
Part Context
This part belongs to the BC856/BC857/BC858 series of general-purpose PNP transistors from onsemi. These devices are complementary to the BC846/BC847/BC848 NPN series. The WT1G suffix indicates the SC-70 tape and reel packaging format with green molding compound. The series is widely used in consumer electronics and portable devices due to its small size and low power consumption.
Replacement Considerations
Compatible substitutes include BC858BWT1G from other manufacturers such as NXP or LRC, provided they meet the same electrical specifications and package dimensions. Cross-reference with BC858B variants from ROHM or Micro Commercial Components, ensuring the B grading bin matches the required DC current gain characteristics.
