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The onsemi BC858C is a single PNP silicon bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It utilizes an SOT-23-3 surface-mount package to provide compact integration in electronic circuits. The device supports a maximum continuous collector current of 100 mA and withstands a collector-emitter voltage of 30 V. Key electrical characteristics include a minimum DC current gain (hFE) of 420, ensuring reliable signal amplification. Thermal performance allows operation within a junction temperature range of -65°C to +150°C, with a power dissipation rating of 300 mW.
Verify the specific manufacturing lot and RoHS compliance status directly with onsemi or authorized distributors before procurement. Confirm that the SOT-23-3 package variant matches your PCB footprint requirements. Ensure that the supply chain source provides valid traceability documentation for quality assurance purposes.
Select this component when a high-gain PNP transistor is required in a small surface-mount form factor. Consider the 30 V voltage rating and 100 mA current limit against circuit demands. Evaluate the 300 mW power dissipation capability relative to expected thermal loads in the final assembly environment.
This component belongs to the BC858 series of small-signal transistors manufactured by onsemi. It serves as a standard discrete semiconductor solution for consumer electronics and industrial control systems requiring reliable PNP switching. The part is widely recognized for its balance of performance and physical size in modern printed circuit board designs.
Cross-reference with other manufacturers' BC858C equivalents such as those from Diotec Semiconductor or Infineon Technologies. Verify pinout compatibility and ensure that hFE binning specifications align with circuit sensitivity requirements before substitution.