BC858C-AQ

BC858C-AQ

$0.03
  • Description:TRANS PNP 30V 0.1A SOT23-3
  • Series:-

SKU:0ba0ae4ab734 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 30V 0.1A SOT23-3
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:250 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:Automotive
  • Qualification:AEC-Q101

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BC858C-AQ

Overview

The Diotec Semiconductor BC858C-AQ is a PNP general-purpose bipolar junction transistor (BJT) designed for surface-mount applications. It features a maximum collector current of -100 mA and a power dissipation rating of 250 mW at 25°C, extending to 300 mW on a PCB. The device operates with a collector-emitter voltage of -30 V and a collector-base voltage of -30 V, while maintaining an emitter-base reverse voltage limit of 5 V. It belongs to the high-gain Group C category, offering a DC current gain (hFE) range of 420 to 800 at IC = -2 mA. The component is qualified under AEC-Q101 standards, ensuring automotive reliability, and supports a junction temperature range from -55°C to +150°C.

Feature Summary

  • AEC-Q101 qualified for automotive-grade reliability
  • High DC current gain in Group C configuration
  • RoHS compliant and free of conflict minerals

Applications

  • Signal processing circuits
  • General switching applications
  • Amplification stages

Procurement Notes

Verify that the specific ordering suffix matches the required qualification level. Confirm whether the design requires standard commercial grade or the specified AEC-Q101 qualified variant. Ensure the procurement documentation explicitly states compliance with RoHS directives and REACH regulations. Validate that the package type aligns with the SOT-23 footprint requirements for the target assembly process.

Selection Notes

Select this component when circuit designs demand high current amplification within a compact surface-mount form factor. The AEC-Q101 qualification makes it suitable for automotive environments requiring enhanced stability. Consider the thermal resistance characteristics when designing heat dissipation strategies for densely packed boards. Verify that the required gain falls within the specified Group C limits to ensure consistent performance across production batches.

Part Context

This part belongs to the BC856 through BC860 series of SMD general-purpose PNP transistors manufactured by Diotec Semiconductor. These devices are engineered for universal application in consumer electronics and industrial systems. The series provides complementary NPN options, such as the BC846 through BC850 families, allowing for matched push-pull configurations in output stages.

Replacement Considerations

BC858B-AQ

FAQ

What distinguishes the BC858C-AQ from the standard BC858C?

The BC858C-AQ is specifically qualified according to the AEC-Q101 automotive standard, whereas the standard BC858C is intended for commercial or industrial use without that specific automotive certification.

What is the maximum power dissipation rating for this transistor?

The maximum power dissipation is rated at 250 mW at an ambient temperature of 25°C, increasing to 300 mW when mounted on a printed circuit board with the minimum recommended pad layout.

Which current gain group does the 'C' suffix indicate?

The 'C' suffix indicates Group C, which corresponds to a DC current gain (hFE) range of 420 to 800 when measured at a collector current of -2 mA and a collector-emitter voltage of 5 V.

BC858C-AQBC858C-AQ
$0.03
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