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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A PG-SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：330 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
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Overview
The BC858CE6327HTSA1 is a dual PNP silicon bipolar junction transistor (BJT) from Infineon Technologies, housed in an SOT-23-3 surface-mount package. It features a maximum DC collector current of 200 mA and a continuous collector current of 100 mA. The device supports a collector-emitter voltage (VCEO) of 30 V, a collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 5 V. Power dissipation is rated at 330 mW, with a gain-bandwidth product (fT) of 250 MHz. The component operates within a temperature range of -65°C to +150°C.
Feature Summary
- Dual PNP configuration for compact circuit integration
- High DC current gain ranging from 420 to 800
- Automotive-grade reliability via AEC-Q100 qualification
Applications
- General-purpose switching applications
- Amplifier circuits requiring high gain
- Automotive electronics systems
Procurement Notes
Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Confirm end-of-life status as discontinuation notices may affect long-term supply chain stability. Ensure compatibility with existing PCB footprints for the SOT-23-3 package before finalizing procurement decisions.
Selection Notes
Select this component when a dual PNP BJT with high current gain (hFE 420-800) is required in a small SOT-23-3 footprint. It is suitable for designs needing AEC-Q100 automotive qualification. Consider the 30 V voltage rating and 330 mW power dissipation limits during thermal management planning for dense board layouts.
Part Context
This part belongs to the BC858 series of PNP transistors manufactured by Infineon Technologies. It utilizes silicon technology and is designed for general-purpose amplification and switching tasks. The component is widely used in consumer and industrial electronics where space efficiency and reliable performance are critical requirements.
Replacement Considerations
Check for direct pin-compatible alternatives within the BC858 family or other manufacturers offering dual PNP SOT-23 transistors with similar hFE ranges and voltage ratings. Verify that any substitute meets the same AEC-Q100 automotive grade requirements if applicable.
