BC858CLT1

$0.04

Description：TRANS PNP 30V 100MA SOT23
Series：*

SKU:3fb2469f8950 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 30V 100MA SOT23
Series：*
Mfr：onsemi
Package：Cut Tape (CT),Bulk
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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BC858CLT1

Overview

The BC858CLT1 is a PNP silicon general-purpose transistor from the BC856ALT1G series, manufactured by onsemi. It is housed in an SOT-23 (TO-236) surface-mount package with three pins: Base, Emitter, and Collector. The device features a collector-emitter voltage of -30 V and a continuous collector current rating of -100 mA dc. Electrical characteristics include a DC current gain range of 420 to 800 at specific test conditions, a collector-emitter saturation voltage of -0.65 V max, and a transition frequency of 100 MHz.

Feature Summary

Designed for general-purpose amplifier applications within low-power surface mount constraints.
Manufactured using lead-free, halogen-free, and BFR-free processes compliant with RoHS standards.
Provides high DC current gain suitable for signal amplification tasks.

Applications

General purpose amplifier circuits
Low power surface mount applications

Procurement Notes

Verify the ordering suffix 'LT1' corresponds to the standard tape and reel packaging configuration as specified in the official datasheet. Confirm that the component meets Pb-Free and RoHS compliance requirements if environmental regulations apply to the assembly process. Ensure the marking code matches the specific device variant to avoid substitution errors.

Selection Notes

Select this component when a PNP transistor with a -30 V collector-emitter breakdown voltage is required. The BC858C designation indicates a specific binning for DC current gain, offering higher amplification capabilities compared to lower gain variants. Consider the thermal resistance and power dissipation limits relative to the PCB substrate material during design.

Part Context

This part belongs to the BC856/BC857/BC858/BC859 family of PNP silicon transistors produced by onsemi. These devices share the same SOT-23 physical footprint but differ primarily in their collector-emitter voltage ratings and DC current gain specifications. The BC858C variant specifically targets applications requiring moderate voltage handling and high gain.

Replacement Considerations

Direct substitutes within the same family include BC858ALT1G and BC858BLT1G, which share the same package and pinout but may have different gain or voltage specifications. Cross-manufacturer equivalents such as those from TDK or Micro Commercial Components are available but require verification of electrical parameters against the original datasheet.

FAQ

What is the pin configuration for the BC858CLT1 in the SOT-23 package?

Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.

Is the BC858CLT1 qualified for automotive applications?

Standard versions are not explicitly listed as AEC-Q101 qualified; only devices with the 'S' or 'NSV' prefix are designated for automotive and unique site control requirements.