BC858CLT1G

BC858CLT1G

$0.10
  • Description:TRANS PNP 30V 0.1A SOT23-3
  • Series:-

SKU:e5173700f06c Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 30V 0.1A SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:300 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:-
  • Qualification:-

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BC858CLT1G

Overview

The BC858CLT1G is a PNP silicon general-purpose transistor from the BC856ALT1G series, manufactured by onsemi. It operates with a collector-emitter voltage of -30 V and a continuous collector current of -100 mA dc. The device features a DC current gain (hFE) ranging from 420 to 800 at an IC of -2.0 mA and VCE of -5.0 V. It utilizes an SOT-23 package (CASE 318) with Style 6 pinout: Pin 1 Base, Pin 2 Emitter, Pin 3 Collector. Thermal dissipation is rated at 225 mW on an FR-5 board.

Feature Summary

  • Designed for general-purpose amplifier applications in low power surface mount environments.
  • Compliant with RoHS standards and free of lead, halogens, and brominated flame retardants.
  • Capable of AEC-Q101 qualification and PPAP support when ordered with S or NSV prefixes.

Applications

  • General purpose amplification circuits
  • Low power surface mount applications
  • Automotive electronics requiring unique site control

Procurement Notes

Verify the specific ordering prefix (S or NSV) if automotive qualification or PPAP capability is required, as these are not standard for the base part number. Confirm the package style matches the application's pinout requirements, specifically ensuring compatibility with SOT-23 Style 6 configurations. Ensure compliance with Pb-Free and Halogen-Free specifications during component selection.

Selection Notes

Select this component for designs requiring high DC current gain within a compact SOT-23 footprint. The -30 V rating suits low-voltage signal processing tasks. Verify that the thermal resistance limits align with the expected ambient temperature conditions, particularly regarding the derating curve above 25°C. Consider the BC857 or BC856 variants if higher voltage ratings are necessary for the circuit topology.

Part Context

This device belongs to the BC856ALT1G series, which includes BC856, BC857, and BC859 variants differentiated primarily by their breakdown voltage ratings. The BC858 variant specifically provides a -30 V collector-emitter breakdown, positioning it between the lower voltage BC857 (-45 V) and higher voltage BC856 (-65 V) models within the same physical package family.

Replacement Considerations

Public confirmed substitute part numbers include BC858BLT1G and BC858CLT3G from onsemi. Cross-manufacturer equivalents such as those from NXP or Micro Commercial Components may be considered if electrical parameters match, though pinout verification is essential.

FAQ

What is the pin configuration for the BC858CLT1G?

The device uses SOT-23 Style 6 pinout: Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector.

Does the BC858CLT1G meet automotive standards?

The standard BC858CLT1G does not explicitly state AEC-Q101 qualification. Devices with the 'S' or 'NSV' prefix are qualified and PPAP capable for automotive applications.

What is the maximum power dissipation?

The total device dissipation is 225 mW on an FR-5 board at 25°C ambient temperature, with a derating factor of 1.8 mW/°C above 25°C.

BC858CLT1GBC858CLT1G
$0.10
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