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The Diotec Semiconductor BC858CW is a surface-mount device (SMD) general-purpose PNP bipolar junction transistor housed in an SOT-323 package. It features a maximum collector current of -100 mA and a power dissipation of 200 mW. The component offers three distinct DC current gain groups: Group A (hFE 180–250), Group B (hFE 220–475), and Group C (hFE 420–800). Maximum ratings include a collector-emitter voltage of -30 V, a collector-base voltage of -30 V, and an emitter-base voltage of -5 V. The transition frequency is typically 100 MHz.
Verify the specific suffix designation to confirm the required current gain group and automotive qualification status. Ensure the ordering code matches the intended hFE binning and compliance requirements. Confirm that the SOT-323 package dimensions align with the target PCB footprint and thermal management strategy before finalizing procurement.
Select this component when a compact PNP transistor with defined gain bins is required for commercial or industrial grade designs. The BC858CW provides a balance of moderate voltage handling and standardized gain characteristics suitable for general analog and digital switching tasks within tight space constraints.
This part belongs to the BC856W through BC859CW series of universal PNP transistors from Diotec Semiconductor. These devices are designed as complementary counterparts to the BC846W through BC849W NPN series. The series supports both standard commercial/industrial grades and specialized AEC-Q101 qualified versions for automotive environments.
BC858BWH
The BC858CW is available in three current gain groups: Group A (hFE 180–250), Group B (hFE 220–475), and Group C (hFE 420–800).
Standard versions are for commercial/industrial use. Automotive suitability requires checking for the -Q (AEC-Q101 compliant) or -AQ (AEC-Q101 qualified) suffixes.
The recommended complementary NPN transistor for the BC858CW is the BC848W.