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The BC858W,115 is a PNP general-purpose transistor manufactured by Nexperia in the SOT323 (SC-70) surface-mounted package. It features a collector-emitter voltage of -30 V and a continuous collector current of -100 mA. The device offers a DC current gain range of 125 to 800 at VCE = -5 V and IC = -2 mA. Key electrical characteristics include a collector-base breakdown voltage of -30 V, emitter-base voltage of -5 V, and total power dissipation of 200 mW. Transition frequency is specified at 100 MHz.
Verify the specific part number suffix against official Nexperia documentation to confirm availability and manufacturing origin. Ensure compliance with RoHS directives and check for any recent product change notices that may affect specifications or assembly sites before finalizing procurement orders.
Select this component for low-voltage PNP applications requiring moderate current handling. The BC858W variant provides lower voltage tolerance compared to BC856W but maintains high gain. Verify thermal resistance requirements for PCB mounting conditions and ensure operating temperatures remain within the specified -65 °C to +150 °C range.
This device belongs to the Nexperia BC856W/BC857W/BC858W family of general-purpose PNP transistors. All variants share the same SOT323 package and pinout configuration but differ in voltage ratings and gain ranges. The BC858W specifically targets applications requiring -30 V collector-emitter breakdown while maintaining high current gain performance.
Direct substitutes within the same family include BC856W and BC857W, though voltage ratings differ. Cross-family replacements require matching package type and verifying electrical parameters such as current gain and breakdown voltages against original design requirements.