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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SOT23-3
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：250 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BC859-C is a PNP general-purpose small-signal bipolar junction transistor manufactured by Infineon Technologies. It utilizes silicon planar technology and is housed in a surface-mount SOT-23-3 package. The device supports a maximum collector current of 100 mA and offers a collector-emitter breakdown voltage of 30 V. Key electrical characteristics include a collector-base voltage rating of 30 V and an emitter-base voltage limit of 5 V.
Feature Summary
- Designed for general-purpose switching and amplification applications
- Utilizes silicon planar technology for robust performance
- Optimized for surface-mount assembly processes
Applications
- General purpose signal amplification
- Switching circuits
- Driver stages for logic interfaces
Procurement Notes
Verify the specific ordering suffix to confirm the exact tape-and-reel quantity and packaging configuration, as these details are defined by the manufacturer's standard logistics options. Confirm RoHS compliance status through the official material content declaration or datasheet documentation prior to finalizing procurement specifications.
Selection Notes
Select this component when a low-voltage PNP transistor with a 30 V collector-emitter rating is required for compact designs. Ensure the application current remains within the 100 mA continuous limit. Verify that the SOT-23-3 footprint matches the PCB layout constraints and thermal management requirements of the target system design.
Part Context
This component belongs to the BC859 series of general-purpose PNP transistors. It shares similar pinouts and basic electrical ratings with other variants in the family, such as the BC857 and BC858, which differ primarily in their DC current gain (hFE) classification ranges. The 'C' suffix typically denotes a specific gain binning category defined by the manufacturer.
Replacement Considerations
Cross-reference with BC859CW from Nexperia or BC859 from Central Semiconductor. Verify that substitute devices meet the identical 30 V Vceo and 100 mA Ic specifications.
