ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 2mA, 5V
- Power - Max：310 mW
- Frequency - Transition：150MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
Download product information
Overview
The BC859AMTF is a PNP epitaxial silicon transistor manufactured by onsemi, housed in an SOT-23 surface-mount package. It features a maximum collector-emitter voltage of -30 V and a continuous DC collector current rating of -100 mA. The device supports a maximum power dissipation of 310 mW at 25°C ambient temperature. Key electrical characteristics include a minimum DC current gain (hFE) of 110 and a current gain bandwidth product (fT) of 150 MHz. The component operates within a junction temperature range up to 150 °C.
Feature Summary
- Designed for low-noise applications within the BC856-BC860 series
- Suitable for automatic insertion in thick and thin-film circuits
- Functions as a complementary device to the BC846 through BC850 NPN series
Applications
- Switching circuits
- General-purpose amplifier stages
- Low-noise signal processing
Procurement Notes
Verify the specific hFE classification suffix (A, B, or C) required for your design, as the 'A' designation indicates a gain range of 110 to 220. Confirm that the tape and reel packaging format aligns with your automated assembly equipment specifications. Ensure compatibility with the SOT-23 footprint dimensions during PCB layout finalization.
Selection Notes
Select this component when a PNP transistor with low noise characteristics is required for small-signal amplification. The BC859AMTF is appropriate for designs needing a direct complement to the BC849 NPN transistor. Consider the -30 V collector-emitter voltage limit and 100 mA current capability against your circuit's peak operational demands.
Part Context
This part belongs to the BC856-BC860 family of PNP epitaxial silicon transistors originally developed by Fairchild Semiconductor and now managed by onsemi following their integration. The series provides standardized small-signal switching and amplification solutions across various gain classifications.
Replacement Considerations
Direct functional equivalents within the same series include BC859BMTF and BC859CMTF, which differ only in DC current gain ranges. Cross-manufacturer replacements must be verified against the SOT-23 pinout and absolute maximum ratings.
