BC859AW

Overview

The BC859AW is a single PNP bipolar junction transistor manufactured by Diotec Semiconductor, housed in an SOT-323 surface-mount package. It features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 30 V. The device exhibits a transition frequency of 100 MHz and a power dissipation rating of 200 mW. Operating temperatures range from -55°C to +150°C, with a maximum DC current gain (hFE) of 520.

Feature Summary

• Single PNP configuration for compact circuit integration
• High current gain capability up to 520
• Wide operating temperature range suitable for diverse environments

Applications

• General-purpose switching applications
• Amplifier circuits
• Signal processing stages

Procurement Notes

Verify the specific suffix 'AW' against the manufacturer's official datasheet to confirm binning or gain classification differences compared to standard variants. Ensure the ordering information matches the exact part number required for your design specifications before finalizing procurement.

Selection Notes

Select this component when a small-form-factor PNP transistor is required for low-power switching or amplification. Consider the 100 mA current limit and 30 V voltage rating to ensure compatibility with the target circuit's electrical requirements and thermal management constraints.

Part Context

This component belongs to the BC859 series of PNP transistors produced by Diotec Semiconductor. It shares the same physical footprint and general electrical characteristics as other members of the family, differing primarily in specific parameter bins or packaging configurations defined by the manufacturer.

Replacement Considerations

Compatible substitutes include BC859C and BC859B, provided their respective gain ranges and voltage ratings align with the original design requirements. Verify pinout compatibility and thermal performance before implementation.