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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A TO-236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：250 mW
- Frequency - Transition：100MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BC859B,215 is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-23 (TO-236AB) surface-mount package with three leads. The device supports a maximum DC collector current of 100 mA and offers a collector-emitter voltage rating of 30 V. Key electrical parameters include a collector-base voltage of 30 V, an emitter-base voltage of 5 V, and a power dissipation capacity of 250 mW. The component features a transition frequency of 100 MHz and operates within a temperature range of -65 °C to +150 °C.
Feature Summary
- Provides high DC current gain for efficient signal amplification
- Designed for low-voltage switching applications
- Utilizes a compact surface-mount plastic package
Applications
- General-purpose switching circuits
- Amplifier stages
- Driver circuits
Procurement Notes
Verify the specific suffix against official Nexperia documentation to confirm package orientation and tape-and-reel specifications. Ensure that the ordering part number matches the required gain binning category. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement orders.
Selection Notes
Select this component when a PNP transistor with a 30 V collector-emitter voltage rating is required. The SOT-23 package is suitable for space-constrained printed circuit board layouts. Consider the 100 mA current limit and 250 mW power dissipation capabilities during thermal design analysis.
Part Context
This component belongs to the BC859 series of PNP general-purpose transistors from Nexperia. It serves as the PNP counterpart to the BC849 NPN series. The device is designed for use in consumer electronics and industrial equipment requiring small-signal amplification or switching functions.
Replacement Considerations
BC859C,215
FAQ
What is the maximum collector-emitter voltage for the BC859B,215?
The maximum collector-emitter voltage (VCEO) is 30 V.
Which package type does the BC859B,215 utilize?
It uses the SOT-23 (also known as TO-236AB) surface-mount plastic package.
