BC859BW

$0.03

Description：TRANS PNP 30V 0.1A SOT-323
Series：-

SKU:c214b21b18ec Category: Single Bipolar Transistors Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 30V 0.1A SOT-323
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
Power - Max：200 mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SOT-323
Grade：-
Qualification：-

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BC859BW

Overview

The BC859BW is a single PNP general-purpose bipolar junction transistor manufactured by Diotec Semiconductor. It utilizes an SOT-323 surface-mount package and operates with a maximum collector current of 100 mA and a power dissipation of 200 mW. The device features a collector-emitter breakdown voltage (VCEO) of -30 V, a collector-base voltage (VCBO) of -30 V, and an emitter-base voltage (VEBO) of -5 V. It belongs to the Group C current gain category, offering a DC current gain (hFE) range of 420 to 800 at -IC = 2 mA and -VCE = 5 V. The component supports a junction temperature range from -55°C to +150°C.

Feature Summary

General-purpose PNP transistor designed for commercial and industrial applications
Three distinct current gain groups available for precise amplification control
Compliant with RoHS directives and REACH regulations without exemptions

Applications

Signal processing circuits
Electronic switching applications
Amplification stages

Procurement Notes

Verify the specific suffix designation when ordering, as it determines compliance standards and marking codes. Confirm that the required current gain group aligns with the design specifications, as the BC859BW corresponds to the highest gain tier within the series. Ensure the procurement documentation references the correct datasheet version to validate thermal resistance and absolute maximum ratings for the intended operating environment.

Selection Notes

Select this component when a high-gain PNP transistor is required in a compact SOT-323 footprint. It serves as the complementary counterpart to the BC849W NPN transistor. Designers should account for the specific hFE range of 420 to 800 to ensure proper biasing in amplifier circuits. Verify that the -30 V voltage rating meets the circuit requirements, as higher voltage variants exist within the same family.

Part Context

This part belongs to the BC856W through BC859CW series of SMD general-purpose PNP transistors. The series provides various voltage ratings and gain groupings to suit different application needs. The BC859BW specifically offers the lowest voltage rating (-30 V) among the standard options but maintains the highest current gain classification (Group C).