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The BC859BW,115 is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It is housed in the SOT323 (SC-70) surface-mount plastic package. The device features a maximum collector current of 100 mA and a collector-emitter voltage rating of 45 V. Key electrical parameters include a collector-base voltage of 50 V, an emitter-base voltage of 5 V, and a DC current gain (hFE) ranging from 420 to 800 at specified test conditions. The component operates within a temperature range of -65°C to +150°C and has a power dissipation capability of 200 mW.
Verify the specific suffix '115' corresponds to the required reel packaging quantity when sourcing. Confirm that the 'BW' gain binning aligns with the design requirements for high-gain applications. Ensure the ordering part number matches the exact manufacturer designation to avoid substitution errors during procurement.
Select this component for designs requiring a compact PNP transistor with high current gain. Compare against NPN complements like the BC849 series if complementary pairs are needed. Verify thermal management capabilities given the 200 mW power dissipation limit in the small SOT323 package.
This part belongs to the Nexperia BC859 family of general-purpose PNP transistors. It serves as the PNP complement to the BC849 NPN series. The family is designed for low-current, low-voltage applications in consumer electronics and industrial control systems where space efficiency is critical.
Direct substitutes include other BC859 variants with compatible pinouts and electrical ratings. Verify that alternative packages maintain the same thermal and mechanical constraints for the target application.