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The BC859C-QR is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-23 (TO-236AB) surface-mount package. The device supports a maximum collector current of 100 mA and withstands collector-emitter and collector-base voltages of 30 V, with an emitter-base voltage rating of 5 V. Key electrical characteristics include a power dissipation of 250 mW, a transition frequency of 100 MHz, and a DC current gain ranging from 420 to 850 at specified test conditions. It operates within a temperature range of -65°C to +150°C.
Verify the specific suffix 'QR' against official Nexperia documentation to confirm reel packaging specifications and AEC-Q101 qualification status. Ensure the ordering part number matches the required gain binning and tape-and-reel dimensions before finalizing procurement orders.
Select this component when a PNP transistor with high current gain and automotive qualification is required. Compare the 100 mA current limit and 30 V voltage ratings against circuit requirements. Consider the SOT-23 footprint constraints and thermal dissipation capabilities relative to alternative packages.
This component belongs to the BC859 series of PNP transistors designed for low-current applications. It serves as the complementary counterpart to NPN devices like the BC849C. The family is characterized by small signal handling capabilities and is widely used in consumer and automotive electronics requiring reliable switching performance.
Direct substitutes include other AEC-Q101 qualified PNP transistors in SOT-23 packages with matching 30 V ratings and similar gain ranges. Verify pinout compatibility and thermal resistance values before substitution.