BC859CLT1

$0.15

Description：TRANS PNP 30V 0.1A SOT23-3
Series：-

SKU:5326384aa2db Category: Single Bipolar Transistors Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：TRANS PNP 30V 0.1A SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
Power - Max：300 mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3 (TO-236)
Grade：-
Qualification：-

Download product information

BC859CLT1

Overview

The BC859CLT1 is a PNP silicon general-purpose small-signal transistor manufactured by onsemi. It operates within a collector-emitter voltage of -30 V and a continuous collector current of -100 mA dc. The device features a DC current gain (hFE) ranging from 220 to 475 at an IC of -2.0 mA and VCE of -5.0 V. It utilizes the SOT-23 (TO-236) surface-mount package, designated as CASE 318 Style 6, with Pin 1 as Base, Pin 2 as Emitter, and Pin 3 as Collector.

Feature Summary

PNP silicon planar construction designed for general-purpose switching and amplification applications
High DC current gain characteristics suitable for low-current signal processing
Lead-free, halogen-free, and bromine-free formulation compliant with RoHS standards

Applications

General-purpose small-signal amplification circuits
Low-power switching applications in consumer electronics
Signal conditioning stages requiring high current gain

Procurement Notes

Verify that the ordering suffix matches CLT1 for tape and reel packaging. Confirm the presence of the 'G' designation or microdot marking to ensure Pb-free compliance. Cross-reference the specific date code and manufacturing site against project requirements if automotive qualification is necessary.

Selection Notes

Select this component when a PNP transistor with a -30 V collector-emitter breakdown voltage is required. Ensure the application current remains below the -100 mA continuous limit. Verify that the SOT-23 footprint aligns with the PCB layout constraints and thermal dissipation capabilities of the target design.

Part Context

This part belongs to the BC856ALT1G series datasheet family, which groups BC856, BC857, BC858, and BC859 devices. While sharing the same physical package and basic topology, each variant differs primarily in its collector-emitter breakdown voltage rating. The BC859 specifically provides the -30 V rating among these options.

Replacement Considerations

BC859BLT1G
BC859CLT3G

FAQ

What is the pin configuration for the BC859CLT1?

In the SOT-23 package, Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.

Is the BC859CLT1 qualified for automotive applications?

Standard BC859CLT1 parts are not explicitly marked as AEC-Q101 qualified. Devices with the 'S' or 'NSV' prefix are specified as AEC-Q101 qualified and PPAP capable.