BC859CLT1G

$0.02

Description：TRANS PNP 30V 0.1A SOT23-3
Series：-

SKU:78edb2db195c Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 30V 0.1A SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
Power - Max：300 mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3 (TO-236)
Grade：-
Qualification：-

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BC859CLT1G

Overview

The BC859CLT1G is a PNP silicon general-purpose transistor from the onsemi BC856ALT1G series, housed in an SOT-23 (TO-236) package. It features a collector-emitter voltage of -30 V and a continuous collector current of -100 mA. The device offers a DC current gain ranging from 180 to 520 at specific test conditions. Electrical characteristics include a collector-base breakdown voltage of -30 V and an emitter-base breakdown voltage of -5.0 V. Thermal performance specifies a total device dissipation of 225 mW on an FR-5 board. The component is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

Feature Summary

PNP silicon construction designed for general-purpose amplifier applications
AEC-Q101 qualified with PPAP capability for automotive requirements
Compliant with environmental standards including RoHS and halogen-free specifications

Applications

General purpose amplifier circuits
Automotive electronic systems requiring unique site control
Industrial applications necessitating AEC-Q101 qualification

Procurement Notes

Verify the ordering suffix matches the required tape and reel quantity, as the standard 'LT1' designation indicates a 3,000-unit reel. Confirm that the 'G' suffix denotes the lead-free packaging status. Ensure the application environment aligns with the specified thermal resistance values for the SOT-23 case outline. Check for any specific prefix requirements if automotive PPAP documentation is mandatory for the supply chain.

Selection Notes

Select this component when a PNP small-signal transistor with a -30 V collector-emitter rating is required. The BC859 variant provides higher current gain compared to the BC856 and BC857 series counterparts within the same family. Consider the SOT-23 package constraints regarding power dissipation and thermal management. Verify compatibility with the intended switching or amplification frequencies against the specified current-gain bandwidth product.

Part Context

This part belongs to the BC856ALT1G series, which includes complementary NPN devices such as the BC846, BC847, BC848, and BC849. The series is manufactured by onsemi using silicon planar technology. The BC859 specifically denotes the highest gain binning within the PNP subset of this general-purpose lineup. It shares the same physical footprint and pinout configuration as other members of the TO-236AB family.