BC860BE6327HTSA1

Overview

The BC860BE6327HTSA1 is a dual PNP silicon bipolar junction transistor (BJT) from Infineon Technologies, housed in an SOT-23-3 surface-mount package. It features a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device has a gain-bandwidth product of 250 MHz and operates within a temperature range of -65°C to +150°C. It is qualified under AEC-Q100 standards for automotive reliability.

Feature Summary

• Dual PNP configuration integrated into a single compact SMD package
• Automotive-grade qualification ensuring high reliability in demanding environments
• Silicon technology optimized for general-purpose switching and amplification

Applications

• General-purpose signal processing circuits
• Automotive electronic control modules
• Switching applications in consumer electronics

Procurement Notes

Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm tape-and-reel packaging and RoHS compliance. Confirm that the component status remains active or note any obsolescence warnings provided by the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a dual PNP transistor is required in a small footprint with automotive qualification. Ensure the circuit design accommodates the 45 V voltage rating and 100 mA current limit. Verify thermal management requirements given the 330 mW power dissipation capability in the SOT-23-3 package.

Part Context

This part belongs to the BC860 series of dual PNP transistors designed for low-power applications. It serves as a complementary counterpart to NPN dual transistors like the BC848 series, offering matched characteristics for differential pairs and push-pull configurations in analog and digital circuits.