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The BC860C,235 is a PNP general-purpose transistor manufactured by Nexperia USA Inc. It utilizes silicon technology and is housed in a SOT-23 (SC-70) surface-mount package with three leads. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of -45 V. Key electrical characteristics include a DC current gain (hFE) ranging from 420 to 800 at an IC of -2 mA and VCE of -5 V. The transition frequency is specified at 100 MHz, and the total power dissipation is rated at 250 mW.
Verify the specific ordering suffix matches the required tape and reel quantity. Confirm the component status remains active within the manufacturer's portfolio. Ensure the datasheet version aligns with the latest revision history provided by Nexperia. Cross-reference the marking code '4G' on the physical package to validate authenticity. Check for any recent product change notifications affecting the manufacturing location or material composition.
Select this component when a PNP transistor with high current gain is required for small-signal applications. The SOT-23 package offers space efficiency for dense PCB layouts. Consider the thermal resistance limits during design to ensure operation within safe junction temperatures. Verify compatibility with the NPN complement BC850 if complementary pairs are needed in the circuit topology.
This part belongs to the BC859/BC860 family of PNP general-purpose transistors originally developed by Philips Semiconductors and now produced by Nexperia. The family includes variants with different gain ranges, such as the BC860B. The BC860C specifically targets applications requiring higher minimum current gain compared to other series members.
The BC860B serves as a lower gain variant within the same package. The BC850 is the NPN complement offering similar electrical characteristics for complementary designs. Other generic PNP transistors in SOT-23 packages may fit mechanically but require verification of hFE and voltage ratings.