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The BC860CWE6327 is a single PNP silicon bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount PG-SOT23 (SOT-23-3) package. The device features a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. Key electrical characteristics include a transition frequency of 250 MHz, a power dissipation rating of 330 mW, and a DC current gain ranging from 420 to 450 at specified test conditions. It operates within a temperature range up to 150°C.
Verify the specific suffix configuration against official Infineon documentation to ensure compatibility with required gain ranges and automotive standards. Confirm availability status as manufacturing lifecycles may change. Cross-reference the exact part number with authorized distributors to avoid counterfeit components. Ensure storage and handling procedures meet moisture sensitivity level requirements for surface-mount devices.
Select this component when a PNP transistor with 45V breakdown and 100mA current capability is required in an SOT-23 package. The high hFE range suits applications needing minimal base drive current. Consider thermal management for the 330mW dissipation limit. Verify that the 250MHz transition frequency meets the circuit's speed requirements compared to faster alternatives.
This part belongs to the BC860 series of small-signal PNP transistors designed for low-voltage, low-power applications. The 'E6327' suffix typically denotes specific binning or packaging configurations used by Infineon for automated assembly. It serves as a complement to NPN counterparts like the BC848 series in push-pull or differential amplifier stages.
Direct substitutes include other PNP SOT-23 transistors with similar VCEO and IC ratings, such as the BC858 series variants, provided pinout and electrical parameters match. Verify that any replacement maintains the required hFE range and automotive qualification if applicable.