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The BC879,112 is an NPN Darlington transistor manufactured by NXP USA Inc., housed in a TO-92 (SOT54) plastic package. It features a maximum collector-emitter voltage of 80 V and a continuous collector current rating of 1 A. The device provides a minimum DC current gain of 1000 at 150 mA. Key electrical limits include a collector-base voltage of 100 V, emitter-base voltage of 5 V, and total power dissipation of 0.83 W at 25 °C ambient temperature. The junction temperature range extends from -65 °C to +150 °C.
Verify the component status against the most recent datasheet before design finalization. Confirm that the ordering suffix does not alter functional specifications unless explicitly documented. Ensure the supplier source aligns with authorized distribution channels to maintain product integrity and traceability throughout the manufacturing lifecycle.
Select this component when high current gain and integrated passive elements are required within a through-hole package. Consider the thermal resistance characteristics and absolute maximum ratings to ensure reliable operation under expected load conditions. Verify compatibility with the intended switching frequencies and saturation voltage requirements for the specific application environment.
This part belongs to the BC875/BC879 series of NPN Darlington transistors produced by Philips Semiconductors, now NXP. The BC879 serves as the higher voltage variant compared to the BC875. The PNP complement for this series is the BC878. These devices are designed for general-purpose switching and amplification tasks requiring high gain.
The BC875 is a related variant within the same family but offers lower voltage ratings. Designers should verify voltage margins when substituting between these specific model numbers to ensure circuit reliability.