BCG002

Overview

The BeRex BCG002 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) die designed for high-gain and high-power amplifier applications operating from DC to 26 GHz. It features a 0.15 micron recessed gate length and a 480 micron gate width, utilizing SI3N4 passivation for reliability. At 12 GHz with Vds = 28V and Id = 20mA, it delivers a typical saturated output power of 33.5 dBm, a gain of 12.5 dB, and a Power Added Efficiency (PAE) of 55%. The device supports a maximum drain-source voltage of 90V and total power dissipation of 4.0W.

Feature Summary

• High-frequency operation capability up to 26 GHz suitable for wideband or narrowband designs
• Optimized for high gain and high power density in RF amplifier stages
• Robust construction using state-of-the-art metallization and silicon nitride passivation

Applications

• Commercial radio frequency systems
• Military and high-reliability communication equipment
• Test and measurement instrumentation

Procurement Notes

Verify the specific revision level of the datasheet before integration, as specifications are subject to change without notice. Confirm that the procurement channel provides devices packaged in antistatic Gel-Pak containers within sealed metallized bags to ensure protection against mechanical damage and electrostatic discharge during transit and storage.

Selection Notes

Select this component for designs requiring high linearity and efficiency in the microwave spectrum. Ensure the application environment accommodates the specified thermal resistance of 10.1 °C/W and utilizes eutectic Au/Sn die attach methods. Verify that the system layout adheres strictly to the recommended wire bonding dimensions to maintain optimal performance and prevent device failure.

Part Context

The BCG002 belongs to the category of GaN power transistors, which leverage wide bandgap semiconductor properties to outperform traditional silicon counterparts in high-frequency and high-power scenarios. This specific die integrates advanced material structures to support demanding RF applications where size, weight, and power efficiency are critical constraints.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Designers should consult BeRex directly for potential cross-reference options or updated product lines.

FAQ

What is the recommended wire bonding configuration for the BCG002?

Use 1 mil diameter gold wires: one gate-to-input (900 μm x 250 μm), one drain-to-output (400 μm x 250 μm), and four source-to-ground (250 μm x 300 μm). Maintain gap A between 230-250 μm and gap B between 130-150 μm.

How should the BCG002 be handled regarding electrostatic discharge?

The device is sensitive to ESD and requires proper grounding of all work surfaces, assembly equipment, and operators. It carries an HBM rating of Class 1A (Passes <500V).

What are the die attach recommendations for this component?

BeRex recommends eutectic die attach using Au/Sn (80/20) pre-forms at temperatures no hotter than 300°C for less than 10 seconds in an inert forming gas or clean dry nitrogen environment.