BCL016B

Overview

The BeRex BCL016B is a GaAs super low noise pHEMT chip featuring a nominal 0.15 micron gate length and 160 micron gate width. Designed for broadband applications requiring very low noise and high associated gain, it utilizes state-of-the-art metallization with SI3N4 passivation. At 12 GHz with Vds=2V and Id=10mA, the typical noise figure is 0.4 dB and associated gain is 13.5 dB. The device supports up to 20 dBm input power and operates within a channel temperature range of -60°C to 150°C.

Feature Summary

• Super low noise figure performance optimized for sensitive RF front-ends
• High associated gain suitable for broadband amplification
• Robust reliability ensured through SI3N4 passivation screening

Applications

• Commercial RF systems
• Military and High-Reliability equipment
• Test and Measurement instrumentation

Procurement Notes

Verify component authenticity by cross-referencing the datasheet revision (Rev. 2.2a) and manufacturer details. Confirm that handling procedures strictly adhere to ESD precautions due to GaAs sensitivity. Ensure die attach methods follow recommended Au/Sn eutectic processes to maintain thermal resistance specifications.

Selection Notes

Select this component for designs prioritizing minimal noise figure at microwave frequencies. Verify bias conditions match the specified Vds=2V and Id=10mA for optimal NF and gain characteristics. Consider the maximum input power rating of 20 dBm when designing input matching networks to prevent device damage.

Part Context

This part belongs to the BeRex lineup of Gallium Arsenide (GaAs) pHEMT chips. It is specifically engineered as a discrete semiconductor die intended for integration into custom RF circuits rather than a packaged module. The product line focuses on providing high-performance active devices for specialized communication and sensing applications.

Replacement Considerations

No public substitute part numbers are documented in the official datasheet. Replacement requires evaluating equivalent GaAs pHEMTs with similar gate dimensions (0.15um x 160um), noise figures, and gain profiles while ensuring compatibility with existing biasing and impedance matching networks.

FAQ

What is the recommended wire bonding configuration?

Use one 1 mil gold gate wire, one 1 mil gold drain wire, and four 1 mil gold source wires. Bonding temperature should not exceed 280°C for more than 2 minutes.

How should the device be attached to the substrate?

BeRex recommends using an Au/Sn (80/20) eutectic pre-form die attach. The operation must be performed below 300°C for less than 60 seconds using inert forming gas or clean dry nitrogen.

Is this component authorized for life support devices?

No. BeRex products are not authorized for use as critical components in life support devices without express written approval from the manufacturer.